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issue 4, may 2009 1 www.diodes.com ? diodes incorporated 2008 a product line o f diodes incorporated ZXGD3102T8 active or?ing controller description the zxgd3102 is intended to drive mosfets configured as ideal diode replacements. the device is comprised of a differential amplifier detector stage and high current driver. the detector monitors the reverse voltage of the mosfet such that if body diode conduction occurs a positive voltage is applied to the mosfet?s gate pin. once the positive voltage is applied to the gate the mosfet switches on allowing reverse current flow. the detectors? output voltage is then proportional to the mosfet drain-source reverse voltage drop and this is applied to the gate via the driver. this action provides a rapid turn off as current decays. features ? turn-off time typically 105ns ? 180v blocking voltage ? proportional gate drive ? 2a source, 5a sink driver ? v cc range 5-15v ? low component count applications ? high side or?ing diode replacement for servers, computer ? low side or?ing diode replacement for telecoms ? ideal diode applications pin out details typical configuration ordering information device status package part mark reel size (inches) tape width (mm) quantity per reel ZXGD3102T8ta active sm8 zxgd3102 7 12 1000 gatel 3 ref 2 n/c 1 gateh 4 8 drain 7 bias 6 gnd 5 v cc sm8
issue 4, may 2009 2 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 absolute maximum ratings parameter symbol limit unit supply voltage 1 v cc 15 v continuous drain pin voltage 1 v d -3 to180 v gateh and gatel output voltage 1 v g -3 to v cc + 3 v driver peak source current i source 4 a driver peak sink current i sink 7 a reference current i ref 25 ma bias voltage v bias v cc v bias current i bias 100 ma power dissipation at t a =25 c p d 500 mw operating junction temperature t j -40 to +150 c storage temperature t stg -50 to +150 c notes: 1. all voltages are relative to gnd pin thermal resistance parameter symbol value unit junction to ambient (*) r ja 250 c/w junction to case (?) r jc 54 c/w notes: (*) mounted on minimum 1oz copper on fr4 pcb in still air conditions (?) junction to solder point at the end of the lead 5 and 6 esd rating model rating unit human body 4,000 v machine 400 v
issue 4, may 2009 3 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 dc electrical characteristics at t a = 25c; v cc = 10v; r bias = 3.3k ?; r ref =3.9k ? parameter symbol conditions min. typ max. unit input and supply characteristics operating current i op v d -100m v - 2.4 - ma v d 0v - 5.2 - gate driver turn-off threshold voltage(**) v t v g = 1v, (*) -50 -24 0 mv gate output voltage (**) v g(off) v d 0v, (*) - 0.58 1 v v g v d = -60mv, ( g ) 4.1 7 - v d = -80mv, ( g ) 6.5 8.5 - v d = -100mv, ( g ) 8.0 9 - v d = -140mv, ( g ) 8.5 9.4 - gateh peak source current i source v gh = 1v 2 - a gatel peak sink current i sink v gl = 5v 5 - - a dc electrical characteristics at t a = 25c; v cc = 10v; r bias = 3.9k ?; r ref =3.9k ? parameter symbol conditions min. typ max. unit input and supply characteristics operating current i op v d -100m v ( g ) - 2.4 - ma v d 0v (*) - 4.8 - gate driver turn-off threshold voltage(**) v t v g = 1v, (*) -55 -29 0 mv gate output voltage (**) v g(off) v d 0v, (*) - 0.57 1 v v g v d = -60mv, ( g ) 3.5 6.5 - v d = -80mv, ( g ) 6.5 8.5 - v d = -100mv, ( g ) 8.0 8.8 - v d = -140mv, ( g ) 8.5 9.4 - gateh peak source current i source v gh = 1v 2 - a gatel peak sink current i sink v gl = 5v 5 - - a notes: (**) gateh connected to gatel (*) r h = 100k ?, r l = o/c; r h needed only for characterization purposes, not in the application ( g ) r l = 100k ?, r h = o/c; r l needed only for characterization purposes, not in the application
issue 4, may 2009 4 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 transient electrical characteristics at t a = 25c; v cc = 10v; r bias = 3.9k; r ref =3.9k turn on propagation delay t d1 c l = 3.3nf, c bias = 1nf, ( g ) (a) 1880 ns turn off propagation delay t d2 30 ns gate rise time t r 9520 ns gate fall time t f 75 ns v cc = 10v; r bias = 3.9k ; r ref =3.9k turn on propagation delay t d1 c l = 10nf, c bias = 1nf, ( g ) (a) 1940 ns turn off propagation delay t d2 32 ns gate rise time t r 9840 ns gate fall time t f 78 ns (a) refer to fig 4: test circuit and fig 5: timing diagram schematic symbol and pin out details pin no. symbol description and function 1 nc no connection this pin can be connected to gnd 2 ref reference this pin is connected to v cc via resistor, r ref . r ref should be selected to source approximately 2.4ma into this pin. see note 1 3 gatel gate turn off this pin sinks current, i sink , from the or?ing mosfet gate 4 gateh gate turn on this pin sources current, i source , to the or?ing mosfet gate 5 v cc power supply this is the supply pin. decouple this point to ground with a ceramic capacitor 6 gnd ground this is the ground reference point. connect to the or?ing mosfet source terminal 7 bias bias this pin is connected to v cc via r bias . r bias should be selected to source either 1 or 1.2 times i ref into this pin depending on the desired turn-off threshold voltage, v t . see note 1 8 drain drain connection this pin connects directly to the or?ing mosfet drain terminal note 1- bias and ref pins should be assumed to be at gnd +0.7v.
issue 4, may 2009 5 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 operation the operation of the device is de scribed step-by-step with reference to the timing diagram below. 1. the detector monitors the mosfet drain-source voltage. 2. at system start up, the mosfet body diode is forced to conduct current from the input power supply to the load and there is approximately -0.6v on the drain pin. 3. the detector outputs a positive vo ltage with respect to ground, this voltage is then fed to the mosfet driver stage and current is sourced out of the gateh pin. the turn on time of the mosfet can be programmed through an external resistor rg. refer to ?speed vs. gate resistance? graph. 4. the current out of the gateh pin is sourced into the or?ing mosfet gate to turn the device on. 5. the gateh output voltage is proportional to t he drain-source voltage drop across the mosfet due to the load current flowing through the mosfet. the controller increases its output gate voltage when the drain current is high to ensure full mosfet enhancement 6. if a short condition occurs on the input power su pply it causes the or?ing mosfet drain current to fall very quickly. 7. when the drain-source differential voltage drops below the turn off threshold, the mosfet gate voltage is pulled low by gatel, turning the device off. th is prevents high reverse current flow from the load to the input power supply which could pull down the common bus voltage causing catastrophic system failure mosfet drain voltage mosfet gate voltage mosfet gate current
issue 4, may 2009 6 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 typical characteristics -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0.00 0 2 4 6 8 10 -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0.00 0 2 4 6 8 10 12 14 16 -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0.00 0 2 4 6 8 10 -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0.00 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 -50 -45 -40 -35 -30 -25 -20 -15 transfer characteristic v g gate voltage (v) v d drain voltage (v) t = -40c t = 25c t = 125c v cc =10v r bias =3.3k r ref =3.9k r load =100k v cc = 15v v cc = 14v v cc = 12v v cc = 10v v cc = 8v v cc = 6v transfer characteristic v g gate voltage (v) v d drain voltage (v) r bias =3.3k r ref =3.9k r load =100k t = 25c transfer characteristic v g gate voltage (v) v d drain voltage (v) v cc =10v r bias =3.9k r ref =3.9k r load =100k t = -40c t = 25c t = 125c r bias =3.9k r ref =3.9k r load =100k t = 25c transfer characteristic v g gate voltage (v) v d drain voltage (v) v cc = 15v v cc = 14v v cc = 12v v cc = 10v v cc = 8v v cc = 6v r bias =3.3k r ref =3.9k r bias =3.9k r ref =3.9k turn-off voltage vs temperature v d drain turn-off voltage (mv) temperature (c) v cc = 10v i sink =1ma v g = 1v
issue 4, may 2009 7 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 typical characteristics 0 5 10 15 20 25 30 0 2 4 6 8 10 0.0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 0.08 0.10 0.12 0.14 0.16 10.8 11 11.2 11.4 11.6 -50 -25 0 25 50 75 100 125 150 2.50 2.55 2.60 2.65 4.90 4.95 5.00 v d switch-on speed voltage (v) time ( s) v g v cc =10v r bias =3.9k r ref =3.9k c load =3.3nf r load =100k v cc =10v r bias =3.9k r ref =3.9k c load =3.3nf r load =100k v g v d switch-off speed voltage (v) time ( s) v cc =10v r bias =3.9k r ref =3.9k c bias =1.0nf c load =3.3nf r load =100k ton toff speed vs temperature time ( s) temperature (c) i off supply current vs temperature v cc =10v r bias =3.9k r ref =3.9k r load =100k supply current (ma) temperature (c) i on
issue 4, may 2009 8 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 typical characteristics 0 5 10 15 20 25 30 0 2 4 6 8 10 0.0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 0.08 0.10 0.12 0.14 0.16 8.8 9 9.2 9.4 9.6 9.8 10 -50 -25 0 25 50 75 100 125 150 2.50 2.55 2.60 2.65 5.35 5.40 5.45 5.50 v d switch-on speed voltage (v) time ( s) v g v cc =10v r bias =3.3k r ref =3.9k c bias =1.0nf c load =3.3nf r load =100k v cc =10v r bias =3.3k r ref =3.9k c bias =1.0nf c load =3.3nf r load =100k v g v d switch-off speed voltage (v) time ( s) v cc =10v r bias =3.3k r ref =3.9k c bias =1.0nf c load =3.3nf r load =100k ton toff speed vs temperature time ( s) temperature (c) i off supply current vs temperature v cc =10v r bias =3.3k r ref =3.9k r load =100k supply current (ma) temperature (c) i on
issue 4, may 2009 9 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 component selection it is advisable to decouple the zxgd3102 closely to v cc and ground due to the possibility of high peak gate currents, as indicated by c1 in figure 4. in applications where the input voltage is higher than 12v, it is recommended to use a zener diode, zd1 as shown in the ty pical application circuit on page 1, and in figure 2, in order to limit the v cc supply voltage to the zxgd3102 and also to limit the maximum voltage applied to the gate of the mosfet. a suitable value for the zener is 10v. the proper selection of external resistors r ref and r bias is important to the optimum device operation. select a value for resistor r ref to give a reference current, i ref , of ~2.4ma. the value of r bias must then be selected to give a bias current, i bias , of approximately 1.2 times i ref . this set the turn-off threshold voltage v t of the controller to ?-24mv? at v cc =10v. r ref = (v cc -0.7v)/ 0.0024 r bias = (v cc -0.7v)/ 0.0028 alternatively, r ref and r bias can be chosen to be equal to set the turn-off threshold voltage v t to ?- 29mv? at v cc =10v. this also reduces the ic current consumption when the gate voltage is off. external gate resistor to gateh pin is optional. it c an be inserted to control the turn-on gate rise time which may help with in-rush current protection, em i issues or power dissipation within the part. the addition of c bias controls the switch-on delay of the mosfet, and ensures stability. a suitable value is 1nf. layout considerations the gate pins should be as close to the mosfet gate as possible. also the ground return loop should be as short as possible. the decoupling capacitor should be close to the v cc and ground pin, and should be a x7r type. trace widths should be maximized in the high current path through the mosfet and ground return in order to minimize the effects of circuit inductance and resistance. for best thermal performance, the pcb heat path fr om pins 5 and 6 needs attention. the area of copper connected to pins 5 and 6 should be maximised.
issue 4, may 2009 10 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 active or?ing or n+1 redundancy ? in normal operation, power supply a and b share the load for maximum reliability. ? power supply a supports the load if power supply b fails and vice versa. ? blocking diodes protect the load from a faul ty power supply affecting the load voltage. ? the load can be tens of amps. ? dissipation in the diodes can be high! ? the zxgd3102 is designed to switch the lo w on-resistance mosfets used to replace the blocking diodes. figure 1: or?ing with schottky diodes
issue 4, may 2009 11 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 figure 2: negative teleco m active or?ing evaluation
issue 4, may 2009 12 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 0v vcc 10v supply dg s drain gateh gnd ref bias vcc gatel zxgd3102 r ref power supply a load or?ing mosfet 30v r bias c bias vcc dg s drain gateh gnd ref bias vcc gatel zxgd3102 r ref power supply b or?ing mosfet 30v r bias c bias r g r g common bus 0v figure 3: positive rail powe r supply active or?ing evaluation
issue 4, may 2009 13 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 figure 4: test circuit figure 5: timing diagram
issue 4, may 2009 14 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8
issue 4, may 2009 15 www.diodes.com ?diodes incorporated 2008 ZXGD3102T8 important notice diodes incorporated makes no warranty of any ki nd, express or implied, with regards to this document, including, but not limited to, the impl ied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries re serve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any pr oduct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product descri bed herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications sha ll assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are repr esented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its represent atives harmless against all cl aims, damages, expenses, and attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more unit ed states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief exec utive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expe cted to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life s upport device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory rami fications of their life support devices or systems, and acknowledge and agree that they are sole ly responsible for all legal, regulatory and safety-related requirements concerning their products and an y use of diodes incorporated products in such safety-critical, life support device s or systems, notwithstanding any devices- or systems-relat ed information or support that may be provided by diodes incorporated. further, customers must fully indemnify di odes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety-critical, life support devices or systems. copyright ? 2009, diodes incorporated www.diodes.com

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